GaN technology: collaboration between Navitas Semiconductor and Avnet Silica

Navitas Semiconductor and Avnet Silica announce a cooperation agreement to expand the market for innovative GaN power ICs. The cooperation will bring significant benefits to next-generation systems that use high-efficiency gallium nitride (GaN) technology and target a wide range of applications

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Navitas GaN

Avnet Silica e Navitas Semiconductor have entered into a collaboration aimed at growing the European market for energy-efficient GaNFast™ power ICs with GaNSense technology produced by Navitas.

The two companies will work closely together by combining their complementary know-how to offer a high level of support and expertise to clients throughout the EMEA region.

"Navitas' unique GaN technology, monolithically integrated gate driver and additional feature set will greatly expand the 'SILICA' portfolio of Wide-Band-Gap semiconductors, " said Gilles Beltran, president of Avnet Silica. "Navitas has expertise in power semiconductors that is unmatched in the industry for this type of advanced technology. We anticipate that our cooperation will bring tremendous benefits to customers operating on the most advanced power system architectures aimed at a wide selection of applications."

David Carroll, Senior Vice President Worldwide Sales at Navitas,also highlightsthe reasons for the partnership, "We chose to work with Avnet Silica because it is one of the leading experts in semiconductor distribution in Europe. The combination of our highly differentiated solutions and Avnet Silica's expertise in technology markets will further support designers and engineers committed to meeting increasingly stringent requirements and regulations in terms of efficiency and size. With our highly experienced technical team and European application laboratory, together we can support customers by offering the best possible solutions and faster time-to-market."

Navitas' GaN Technology

GaN technology is a next-generation semiconductor solution that is growing rapidly due to its ability to offer significantly higher performance than conventional silicon semiconductors while reducing power consumption and footprint. A GaN device operates up to 20 times faster than a silicon device and can handle three times the current density. This is coupled with significant space-saving advantages. All of which, offers power system designers, engineers and architects potentially 20 percent lower system costs.

Navitas' GaNFast™ power ICs with GaNSense™ technology integrate power, drive and control capabilities, as well as autonomous protection and leakage-free current sensing functions. This ensures the highest energy efficiency, smallest footprint and best performance in power conversion solutions, making them a market benchmark. The company's latest GaNSense half-bridge IC family offers a revolutionary solution fully integrated into a single component that enables AC-DC power supplies to achieve switching frequencies in the MHz range, ideal in a wide range of applications.


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