Navitas Semiconductor has announced the opening of a new Design Center for electric vehicles (EVs), enhancing its commitment to higher power GaN markets. GaN-based on-board chargers (OBCs) are estimated to recharge 3 times faster with energy savings of up to 70% compared to silicon solutions. GaN OBCs, DC-DC converters and traction inverters are estimated to reduce battery costs by 5% and accelerate EV adoption worldwide by three years. In addition, it is estimated that an upgrade of electric vehicles to GaN will reduceCO2 emissions by 20% per year. Gallium nitride (GaN) devices are at the forefront of power semiconductor technology, operating 20 times faster than traditional silicon chips. Navitas' GaNFast™ power ICs integrate GaN power, GaN drive, protection and control.
The new Design Center, based in Shanghai, China, houses a highly experienced team of world-class power system designers with comprehensive electrical, thermal and mechanical design, software development and full simulation and prototyping capabilities. Electric vehicle customers will be supported worldwide by the new team, from concept to prototype, through to full qualification and mass production.
Hao Sun, the new senior director of the Shanghai Design Center, said, "The design centre will develop schematics, layouts and firmware for fully functional and feasible EV power systems. Navitas will work in collaboration with OBC, DC-DC and traction system companies to create world-class innovative solutions with maximum power density and efficiency to push GaN into mainstream electric mobility."
High-power 650V GaN ICs tailored for EV applications were sampled to electric vehicle customers in December. A 6.6 kW OBC concept was shown at the recent Xiaomi Portfolio Demo Day and the CES 2022.
Charles Zha, VP and GM of Navitas China, commented: "Electric mobility is a growing market for GaN and Navitas is making rapid progress towards higher power applications such as electric vehicles, data centres and solar.
The production of a GaN power IC has aCO2 footprint up to 10 times smaller than that of a silicon chip. Considering the efficiency of the use case and the size and weight advantages of the material, each GaN power IC shipped can save around 4 kg ofCO2.
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