Nexperia and UAES sign partnership for GaN power semiconductors

Nexperia and United Automotive Electronic Systems (UAES) collaborate in gallium nitride (GaN) power semiconductors

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Nexperia_Press_image_GaN_CCPAK_demo_board

Nexperia has announced a comprehensive partnership on gallium nitride (GaN) power semiconductors with United Automotive Electronic Systems (UAES). The programme will focus on power systems for electric vehicles, with the aim of jointly developing automotive applications using GaN technology.

The electrification of cars, the increasing energy requirements of telecommunications equipment for 5G and the rise of Industry 4.0 require power conversion efficiencies for which GaN is expected to become the leading technology.

Nexperia produces GaN based on mature and reliable mass production techniques, largely in its own global production facilities, to manufacture products to AEC-Q101 automotive standards. UAES provides automotive manufacturers with advanced and complete solutions for powertrain and control systems; in particular, it specialises in the development, manufacture and sale of petrol engine management systems, transmission control systems, vehicle body electronics, and hybrid and electric drive control systems. Its five technology centres in China have world-class laboratories for whole vehicles, engines, automatic transmissions and electric drive performance development.

Paul Zhang, SVP Sales & Marketing and General Manager of Nexperia China comments: "Our intensive collaboration in GaN will help both companies to provide power system solutions for electric vehicles. Earlier this month we announced an increase in global production and R&D investment to fully support new product development. We intend to expand our investments and jointly create a laboratory to develop applications of GaN technology for the automotive industry.

 

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