STMicroelectronics e Tsmc (Taiwan Semiconductor Manufacturing Company) are collaborating to accelerate the development of gallium nitride process technologies and the delivery of discrete and integrated GaN devices to the market.
Through this collaboration, ST's innovative and strategic GaN-based products will be manufactured using Tsmc's state-of-the-art process technology.
The advantages of gallium nitride
Gallium nitride is a wide bandgap semiconductor material that offers significant advantages over traditional silicon-based semiconductors for power applications. Its characteristics make it an ideal material for large-scale adoption in evolving applications such as automotive, industrial, telecommunications and other specific consumer electronics market applications, in both 100 V and 650 V clusters.
In particular, GaN-based power products and integrated circuits will enable ST to provide solutions for mid- to high-power applications with higher efficiency characteristics than silicon-based technologies in the same types, including automotive converters and chargers for hybrid and electric vehicles.
The mega trends in electrification
GaN-based power technologies and integrated circuits will help accelerate the megatrends of electrification of private and commercial vehicles.
Marco Monti, president of STMicroelectronics' Automotive and Discrete Group, comments: 'This collaboration complements our existing activities on gallium nitride at our Tours site in France and with Cea's Leti research centre.
